Determination of the minority carrier diffusion length of SnS using electro-optical measurements

Ramakrishna Reddy, Kotte, Nwofe, Patrick and Miles, Robert (2013) Determination of the minority carrier diffusion length of SnS using electro-optical measurements. Electronic Materials Letters, 9 (3). pp. 363-366. ISSN 1738-8090

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Official URL: http://dx.doi.org/10.1007/s13391-013-2194-3

Abstract

The minority carrier diffusion length of the “absorber layer” in a solar cell is generally accepted to be one of the most important parameters that govern the performance of a solar cell device. In this work, thin films of SnS have been thermally evaporated onto cadmium sulphide/indium tin oxide/glass substrates, to fabricate heterojunction solar cell devices. The minority carrier diffusion length was determined for the first time for SnS layers using spectral response measurements in conjunction with optical absorption coefficient versus wavelength measurements. The minority carrier diffusion length was determined to be in the range 0.18–0.23 µm for the SnS/CdS devices investigated in this work.

Item Type: Article
Uncontrolled Keywords: thermal evaporation, post deposition annealing, SnS, minority carrier diffusion length
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Ay Okpokam
Date Deposited: 07 Oct 2013 10:42
Last Modified: 24 Oct 2017 08:53
URI: http://nrl.northumbria.ac.uk/id/eprint/13732

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