Mechanically gated electrical switches by creasing of patterned metal/elastomer bilayer films

Xu, Ben, Chen, Dayong and Hayward, Ryan (2014) Mechanically gated electrical switches by creasing of patterned metal/elastomer bilayer films. Advanced Materials. ISSN 1521-4095

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Official URL: http://dx.doi.org/10.1002/adma.201400992

Abstract

Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, flexible multilayer structures capable of undergoing large compressive deformation are prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to the formation of an electrical connection in a reversible and reproducible fashion.

Item Type: Article
Additional Information: Published online before print 28 April 2014.
Subjects: F100 Chemistry
F200 Materials Science
F300 Physics
H300 Mechanical Engineering
Department: Faculties > Engineering and Environment > Mechanical and Construction Engineering
Depositing User: Bin Xu
Date Deposited: 28 Apr 2014 15:10
Last Modified: 10 Aug 2015 11:05
URI: http://nrl.northumbria.ac.uk/id/eprint/16180

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