Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

Beattie, Neil, Zoppi, Guillaume, See, Patrick, Farrer, Ian, Morrison, Dominique, Miles, Robert and Ritchie, David (2014) Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements. Solar Energy Materials and Solar Cells, 130 (SI). pp. 241-245. ISSN 0927-0248

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Official URL: http://dx.doi.org/10.1016/j.solmat.2014.07.022

Abstract

The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.

Item Type: Article
Additional Information: Published online 26-8-2014 ahead of print.
Uncontrolled Keywords: InAs quantum dots, concentrator, solar cell
Subjects: F200 Materials Science
F300 Physics
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Guillaume Zoppi
Date Deposited: 07 Aug 2014 07:45
Last Modified: 28 Jan 2016 11:24
URI: http://nrl.northumbria.ac.uk/id/eprint/17364

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