Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

Zhang, R., Li, Yifan, Murray, J., Bunting, A., Smith, S., Dunare, C., Stevenson, J., Desmulliez, Marc and Walton, Anthony (2013) Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. In: Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on. IEEE, Piscataway, NJ, pp. 37-42. ISBN 978-1-4673-4845-4

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Official URL: http://dx.doi.org/10.1109/ICMTS.2013.6528142

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5:1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mΩ using the Kelvin contact resistance structures.

Item Type: Book Section
Uncontrolled Keywords: Daisy chain, Kelvin structure, TSV, electroplating, photoresist CMP
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mechanical and Construction Engineering
Depositing User: Yifan Li
Date Deposited: 27 Feb 2015 12:43
Last Modified: 10 Nov 2016 12:38
URI: http://nrl.northumbria.ac.uk/id/eprint/21234

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