Characterisation of aluminium nitride films and surface acoustic wave devices for microfluidic applications

Zhou, Jizhou, De Miguel-Ramos, Mario, Garcia-Gancedo, Luis, Iborra, Enrique, Olivares, Jimena, Jin, Hao, Luo, Jikui, Elhady, Ahmed, Dong, Sean, Wang, D. M. and Fu, Yong Qing (2014) Characterisation of aluminium nitride films and surface acoustic wave devices for microfluidic applications. Sensors and Actuators B: Chemical, 202. pp. 984-992. ISSN 0925 4005

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Official URL: http://dx.doi.org/10.1016/j.snb.2014.05.066

Abstract

Aluminium nitride (AlN) films with different thicknesses (from 2.3 to 4.7 μm) were deposited onto high resistivity silicon substrates using magnetron sputtering. Crystalline and bonding structures of the deposited AlN films were characterised. The AlN films showed a highly c-axis texture. AlN film based surface acoustic wave (SAW) devices were fabricated and characterised. The SAW devices showed Rayleigh wave transmission band with a large side-lobe suppression of ∼15 dB. With the increase in film thickness, both the central band frequency and electromechanical coupling coefficient were increased, and values of temperature coefficient of frequency was increased linearly from −21.3 to −27.4 ppm/K. Microfluidic manipulations including streaming, pumping and jetting have been realised using AlN SAW devices. The applied RF power boundary between streaming and pumping and that between the pumping and jetting decreased with the increase of film thickness. The measured streaming and pumping velocities as well as device surface temperatures increased with the film thickness.

Item Type: Article
Uncontrolled Keywords: AlN film, surface acoustic wave, microfluidic, microstructure, thickness
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 23 Mar 2015 12:50
Last Modified: 09 Mar 2016 14:27
URI: http://nrl.northumbria.ac.uk/id/eprint/21719

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