Effective n-type doping strategy through codoping SiAl–FNin aluminum nitride

Wang, Zhiguo, Li, Jingbo and Fu, Yong Qing (2014) Effective n-type doping strategy through codoping SiAl–FNin aluminum nitride. Applied Physics Express, 7 (11). p. 111004. ISSN 1882-0778

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Official URL: http://dx.doi.org/10.7567/APEX.7.111004

Abstract

Using a first-principles pseudopotential method, we studied an effective n-type doping strategy through codoping SiAl–XN (X = F, Cl, Br, and I) in aluminum nitride. Results revealed that the donor ionization energy of the SiAl–XN complex is much lower than that of the corresponding isolated SiAl impurity. Theoretically obtained ε(+/0) ionization energies are all near the conduction band minimum (CBM), which is only 1.4 meV below the CBM of the SiAl–FN pair. The low ε(+/0) ionization energy of the SiAl–XN complex can be explained by the combined repulsion between the X element (X = F, Cl, Br, and I)- and Si donor-induced levels.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 23 Mar 2015 14:39
Last Modified: 10 Aug 2015 11:03
URI: http://nrl.northumbria.ac.uk/id/eprint/21729

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