Control of microstructure coarsening of a Ti substrate during diamond film deposition using Ar/H2/CH4 gas mixture

Fu, Yong Qing, Lam Loh, Nee, Yan, Bibo, Sun, Chang Qing and Hing, Peter (2000) Control of microstructure coarsening of a Ti substrate during diamond film deposition using Ar/H2/CH4 gas mixture. Thin Solid Films, 359 (2). pp. 215-220. ISSN 0040 6090

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Official URL: http://dx.doi.org/10.1016/S0040-6090(99)00750-6

Abstract

Diamond films were prepared on a pure Ti substrate using the microwave plasma assisted chemical vapor deposition (MW-PACVD) method. The effects of applying two types of gas mixtures (H2/CH4 and Ar/H2/CH4) during diamond deposition on the microstructure of a Ti substrate were studied. With H2/CH4 (196:4) gas mixture, during diamond film deposition, hydrogen diffused into the Ti substrate and led to significant microstructure coarsening and a severe loss in Charpy impact energy. Post dehydrogenation annealing at a temperature of 800°C, could not change the coarse structure of the substrate, thus there was no improvement in Charpy impact energy. With the application of Ar/H2/CH4 (180:16:4) gas mixture, a smooth and nano-crystalline diamond film was deposited, and there was a minimum change in the substrate microstructure and Charpy impact energy after diamond deposition. The above results provide useful information for the successful application of diamond films (on a Ti substrate) for biomedical and aerospace application.

Item Type: Article
Uncontrolled Keywords: Microstructure coarsening, Ti substrate, Diamond film deposition
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 24 Mar 2015 15:03
Last Modified: 16 Mar 2016 14:19
URI: http://nrl.northumbria.ac.uk/id/eprint/21759

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