Generation and relaxation of residual and recovery stress for sputtered TiNi films

Fu, Yong Qing and Du, Hejun (2003) Generation and relaxation of residual and recovery stress for sputtered TiNi films. Journal de Physique IV - Proceedings, 112. pp. 857-860. ISSN 1155-4339

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Official URL: http://dx.doi.org/10.1051/jp4:20031016

Abstract

TiNi films with different Ti/Ni ratios were prepared by co-sputtering Ti50Ni50 (at%) target with Ti target at temperature of 723 K. The stress values in the deposited films changed significantly with Ti contents and postannealing temperatures due to the differences in phase transformation behaviors and intrinsic stress. Post-annealing of thèse films at 923 K for 1 hour could modify the intrinsic stress and martensite transformation behavior thus cause the significant decrease in residual stress. For all three types of film annealed at 1023 K for 1 hour, the large stress in the thin films could damage the shape memory effect or result in the peeling-off of film from Si substrate.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 26 Mar 2015 12:14
Last Modified: 24 Oct 2017 08:55
URI: http://nrl.northumbria.ac.uk/id/eprint/21809

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