Preparation and characterization of copper oxide thin films deposited by filtered cathodic vacuum arc

Gan, Z. H., Yu, G. Q., Tay, Beng Kang, Tan, C. M., Zhao, Z. W. and Fu, Yong Qing (2003) Preparation and characterization of copper oxide thin films deposited by filtered cathodic vacuum arc. Journal of Physics D: Applied Physics, 37 (1). pp. 81-85. ISSN 0022-3727

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Official URL: http://dx.doi.org/10.1088/0022-3727/37/1/013

Abstract

Copper oxide thin films deposited on Si (100) by a filtered cathodic vacuum arc with and without substrate bias have been studied by atomic force microscopy, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The results show that the substrate bias significantly affects the surface morphology, crystalline phases and texture. In the film deposited without bias, two phases—cupric oxide (CuO) and cuprous oxide (Cu2O)—coexist as cross-evidenced by XRD, XPS and Raman analyses, whereas CuO is dominant concurrent with CuO (020) texture in the film deposited with bias. The film deposited with bias exhibits a more uniform and clearer surface morphology although both kinds of films are very smooth. Some explanations are given as well.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 26 Mar 2015 15:46
Last Modified: 31 Mar 2016 14:56
URI: http://nrl.northumbria.ac.uk/id/eprint/21839

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