Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Liu, Yang, Chen, Tu Pei, Zhao, P., Zhang, Sam, Fung, Steve and Fu, Yong Qing (2005) Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering. Applied Physics Letters, 87 (3). 033112. ISSN 0003 6951

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Official URL: http://dx.doi.org/10.1063/1.2000337

Abstract

Al-rich AlNthin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60nm Al-rich AlNthin film, a voltage of −15V applied to the metal electrode for 10−6s causes a flatband voltage shift of ∼1.5V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlNthin films provide the possibility of memory applications with low cost.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 26 Mar 2015 16:29
Last Modified: 24 Oct 2017 08:54
URI: http://nrl.northumbria.ac.uk/id/eprint/21849

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