Thermal and chemical vapor deposition of Si nanowires: Shape control, dispersion, and electrical properties

Colli, Alan, Fasoli, Andrea, Beecher, Paul, Servati, Peyman, Pisana, Simone, Fu, Yong Qing, Flewitt, Andrew, Milne, William, Robertson, J., Ducati, C., De Franceschi, S., Hofmann, S. and Ferrari, Andrea (2007) Thermal and chemical vapor deposition of Si nanowires: Shape control, dispersion, and electrical properties. Journal of Applied Physics, 102 (3). 034302. ISSN 0021 8979

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We investigate and compare complementary approaches to SiNW production in terms of yield, morphology control, and electrical properties. Vapor-phase techniques are considered, including chemical vapor deposition (with or without the assistance of a plasma) and thermal evaporation. We report Au-catalyzed nucleation of SiNWs at temperatures as low as 300°C using SiH4 as precursor. We get yields up to several milligrams by metal-free condensation of SiO powders. For all processes, we control the final nanostructure morphology. We then report concentrated and stable dispersions of SiNWs in solvents compatible with semiconducting organic polymers. Finally, we investigate the electrical response of intrinsic SiNWs grown by different methods. All our SiNWs exhibit p-type behavior and comparable performance, though in some cases ambipolar devices are observed. Thus, processing and morphology, rather than the growth technique, are key to achieve optimal samples for applications.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 27 Mar 2015 09:33
Last Modified: 24 Oct 2017 08:54

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