Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

Proskuryakov, Yuri, Durose, Ken, Major, Jonathan, Al Turkestani, Mohammed, Barrioz, Vincent, Irvine, Stuart and Jones, Eurig (2009) Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices. Solar Energy Materials and Solar Cells, 93 (9). pp. 1572-1581. ISSN 0927 0248

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Official URL: http://dx.doi.org/10.1016/j.solmat.2009.04.010

Abstract

Doping, compensation and photovoltaic performance have been investigated in all-metal-organic vapour-phase deposition (MOCVD) grown CdTe/CdS solar cells that were co-doped with arsenic and chlorine.

Although arsenic chemical concentration is in the range of 1017–1.5×1019 cm−3, the maximum net acceptor concentration is only in the order of 1014 cm−3, as determined by capacitance–voltage characteristics. Admittance spectroscopy revealed shallow traps at 0.055 eV which were attributed to AsTe; its compensation by Cdi is discussed. Formation of the alloy CdSxTe1−x is linked to deep levels at EV+∼0.55 eV and EV+∼0.65 eV. Limits to the diffusion of photo-generated carriers were considered to be important in determining photovoltaic performance rather than carrier lifetime. Prospects for optimizing the performance of such co-doped MOCVD-grown devices are discussed.

Item Type: Article
Uncontrolled Keywords: Thin film solar cells; CdTe; MOCVD; Doping; Electrical properties
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 23 Nov 2015 16:09
Last Modified: 17 Mar 2016 12:09
URI: http://nrl.northumbria.ac.uk/id/eprint/24703

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