Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert, Franziska, Hamilton, David I., Yakushev, Michael, Beattie, Neil, Zoppi, Guillaume, Moynihan, Matthew, Forbes, Ian, Karotki, Anatoli, Mudryi, Alexandre, Grossberg, Maarja, Krustok, Jüri and Martin, Robert (2011) Optical properties of high quality Cu2ZnSnSe4 thin films. Applied Physics Letters, 99 (6). ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.3624827

Abstract

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

Item Type: Article
Additional Information: Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Subjects: F300 Physics
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: EPrint Services
Date Deposited: 02 Sep 2011 12:22
Last Modified: 31 Oct 2017 04:30
URI: http://nrl.northumbria.ac.uk/id/eprint/2477

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