CuInSe2 precursor films electro-deposited directly onto MoSe2

Cummings, Charles, Zoppi, Guillaume, Forbes, Ian, Dale, Phillip, Scragg, Jonathan, Peter, Laurence, Kociok-Köhn, Gabriele and Marken, Frank (2010) CuInSe2 precursor films electro-deposited directly onto MoSe2. Journal of Electroanalytical Chemistry, 645 (1). pp. 16-21. ISSN 1572-6657

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Official URL: http://dx.doi.org/10.1016/j.jelechem.2010.03.031

Abstract

Mo/MoSe2 thin film electrodes formed by selenisation of molybdenum are investigated as chemically robust substrates for the electro-deposition of InCu precursor layers for CuInSe2 (CISe) solar cell absorber films. Exposure of molybdenum films to selenium vapour at 550 °C produces thin and chemically robust heterostructures of Mo/MoSe2. These films exhibit the characteristics of a degenerate semi-conductor and provide close to metallic electrical conductivity for electro-deposition processes in both acidic and alkaline aqueous media. The Mo/MoSe2 films are characterised by cyclic voltammetry for the reduction of in aqueous 0.1 M KCl, for the reduction of 0.1 M In3+ in aqueous 0.5 M LiCl pH 3, and for the reduction of 0.1 M Cu2+ in aqueous 3 M NaOH with 0.2 M d-sorbitol. In all three cases well-defined and reversible voltammetric responses are observed. For the formation of CISe films initially In3+ is deposited potentiostatically followed by electro-deposition of Cu2+ and selenisation at 550 °C in selenium vapour. Mechanically stable CISe films are produced and preliminary photo-electrochemical data demonstrate the effects of changing the stoichiometry.

Item Type: Article
Uncontrolled Keywords: Copper indium diselenide, solar cells, Molybdenum
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: EPrints Services
Date Deposited: 03 Aug 2010 10:59
Last Modified: 11 Mar 2016 11:39
URI: http://nrl.northumbria.ac.uk/id/eprint/2740

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