A method for predicting IGBT junction temperature under transient condition

Ahmed, Mohamed Mostafa Ramadan and Putrus, Ghanim (2008) A method for predicting IGBT junction temperature under transient condition. In: 34th Annual Conference of IEEE Industrial Electronics, 10-13 November 2008, Orlando, FL..

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Official URL: http://dx.doi.org/10.1109/IECON.2008.4757996

Abstract

In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified. A simulation work has been carried out on a single IGBT under different conditions using MATLAB/SIMULINK. The results show that the proposed method is effective to predict the junction temperature of the solid-state device during transient conditions and is applicable to other devices such as diodes and thyristors.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Insulated gate bipolar transistors, Power semiconductors, Solid state electronics, Semiconductor switches
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: EPrint Services
Date Deposited: 04 Mar 2010 10:11
Last Modified: 27 Oct 2017 23:25
URI: http://nrl.northumbria.ac.uk/id/eprint/3067

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