Thin film metal-insulator-metal structure with a Langmuir-Blodgett overlayer

McHale, Glen, Newton, M. I. and Neal, D. B. (1994) Thin film metal-insulator-metal structure with a Langmuir-Blodgett overlayer. Vacuum, 45 (8). pp. 897-900. ISSN 0042-207X

Full text not available from this repository.
Official URL: https://doi.org/10.1016/0042-207X(94)90130-9

Abstract

Voltage controlled negative differential resistance (NDR) and electron emission (EE) have been observed in thin metal films, subsequent to the application of a forming voltage. The effect of a post-forming deposition of a thin insulating overlayer using the Langmuir-Blodgett (LB) technique is reported. Significant enhancements of the magnitudes of both the conduction current and emission current are observed. Furthermore, the voltage at which the NDR occurs and the sharpness of the current-voltage (I-V) characteristics are increased. The effect on the peak current of a change in the thermal conductivity of the sample is discussed. It is suggested that this and the intrinsic film resistance are responsible for the increased sharpness of the I-V characteristics and the change in peak position.

Item Type: Article
Subjects: F300 Physics
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Paul Burns
Date Deposited: 09 Jun 2017 10:40
Last Modified: 24 Oct 2017 08:55
URI: http://nrl.northumbria.ac.uk/id/eprint/31021

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