Development of phase shift lithography for the production of metal-oxide-metal diodes

Dodd, Linzi, Rosamond, Mark, Wood, David and Gallant, Andrew (2014) Development of phase shift lithography for the production of metal-oxide-metal diodes. Micro & Nano Letters, 9 (7). pp. 437-440. ISSN 1750-0443

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Official URL: https://doi.org/10.1049/mnl.2014.0102

Abstract

Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Geography and Environmental Sciences
Depositing User: Becky Skoyles
Date Deposited: 17 Apr 2018 07:33
Last Modified: 17 Apr 2018 07:33
URI: http://nrl.northumbria.ac.uk/id/eprint/33990

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