Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes

Dodd, Linzi, Wood, David and Gallant, Andrew (2013) Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes. Micro & Nano Letters, 8 (8). pp. 476-478. ISSN 1750-0443

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Official URL: https://doi.org/10.1049/mnl.2013.0177

Abstract

The successful production, via two different oxidation processes, of metal-oxide-metal (MOM) diodes is presented. An innovative reactive ion etching and plasma assisted regrowth process has been used to provide oxides, which are in the thickness range 4.0-5.1 nm. These are thinner and physically more uniform than oxides grown in a furnace, resulting in diodes which should conduct via electron tunnelling across the MOM junction. Transmission electron microscopy analysis has been used in conjunction with time of flight secondary ion mass spectrometry analysis to verify oxide thickness and uniformity.

Item Type: Article
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Geography and Environmental Sciences
Depositing User: Becky Skoyles
Date Deposited: 17 Apr 2018 08:28
Last Modified: 17 Apr 2018 08:28
URI: http://nrl.northumbria.ac.uk/id/eprint/33992

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