Studies on ZnS0.5Se0.5 buffer based thin film solar cells

Venkata Subbaiah, Yerva, Prathap, Pathi, Ramakrishna Reddy, Kotte, Miles, Robert and Yi, J. (2008) Studies on ZnS0.5Se0.5 buffer based thin film solar cells. Thin Solid Films, 516 (30). pp. 7060-7064. ISSN 0040-6090

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Official URL: http://dx.doi.org/10.1016/j.tsf.2007.12.115

Abstract

ZnS0.5Se0.5 has been proposed as a novel buffer layer, alternative to CdS for solar cell application. ZnS0.5Se0.5 layers were deposited at 300 °C using close-spaced evaporation. The layers exhibited cubic structure with a sharp (111) reflection. The films showed an optical transmittance > 80% with an energy band gap of 3.01 eV and the electrical resistivity of the films was ~ 105 ?cm. CuInS2 (CIS) films synthesized by sulphurisation process of rf sputtered Cu/In precursor layers formed on Mo coated glass were used as absorber. Structural, optical and electrical studies were performed to characterize the synthesized CuInS2 films. Thin film solar cells were fabricated by depositing a thin ZnS0.5Se0.5 buffer layer onto the Glass/Mo/CuInS2 with sprayed ZnO:Ga as a window layer. The interfacial properties of the resulting heterojunction were studied using current–voltage (I–V), capacitance–voltage (C–V) and spectral response measurements and the results were discussed.

Item Type: Article
Uncontrolled Keywords: solar cells, photovoltaic power generation
Subjects: F300 Physics
H800 Chemical, Process and Energy Engineering
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: EPrints Services
Date Deposited: 14 Aug 2009 14:24
Last Modified: 18 Mar 2016 10:51
URI: http://nrl.northumbria.ac.uk/id/eprint/3488

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