Maiello, Pietro, Zoppi, Guillaume, Miles, Robert, Pearsall, Nicola and Forbes, Ian (2011) Chalcogenisation of Cu-Sb metallic precursors for thin film photovoltaic devices. In: 26th European Photovoltaic Solar Energy Conference and Exhibition, 5-9 September 2011, Hamburg, Germany.
Full text not available from this repository. (Request a copy)Abstract
In this paper, we report on the sulphurisation/selenisation of CuSb metallic precursors. The precursors were deposited by magnetron sputtering on molybdenum coated glass substrates from elemental targets. They were coated with an evaporated Se and/or S layer before annealing in a tube furnace at temperature of 500 °C. The thickness of the Se and S layers was adjusted to yield a range of compositions. The films were characterised by X-ray diffraction, secondary electron microscopy, secondary ion mass spectroscopy and photoelectrochemical measurements. Se-free films deposited on molybdenum/glass crystallised into Cu3SbS3 with a monoclinic structure. Chalcogenides converted at 500 °C showed p-type conductivity and energy band gaps varying from 1.2eV to 1.8eV depending on the S/Se ratio. Quantum efficiency curves were recorded over the spectral range 400-1300nm using a 3-electrode configuration in aqueous Eu(NO3)3. The measurements indicate that the films fabricated are photoactive and active junctions are formed.
Item Type: | Conference or Workshop Item (Paper) |
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Subjects: | F200 Materials Science |
Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
Related URLs: | |
Depositing User: | Ay Okpokam |
Date Deposited: | 30 Jan 2012 12:37 |
Last Modified: | 12 Oct 2019 19:07 |
URI: | http://nrl.northumbria.ac.uk/id/eprint/5149 |
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