Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition

Nagamani, K., Revathi, Naidu, Lingappa, Yekula, Ramakrishna Reddy, Kotte and Miles, Robert (2011) Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition. In: Department of Atomic Energy - Solid State Physics Symposium, 19-23 December, SRM University, Tamilnadu, India.

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Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed.

Item Type: Conference or Workshop Item (Paper)
Subjects: F200 Materials Science
F300 Physics
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
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Depositing User: EPrint Services
Date Deposited: 14 Oct 2011 15:09
Last Modified: 24 Oct 2017 08:53

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