Nagamani, K., Revathi, Naidu, Lingappa, Yekula, Ramakrishna Reddy, Kotte and Miles, Robert (2011) Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition. In: Department of Atomic Energy - Solid State Physics Symposium, 19-23 December, SRM University, Tamilnadu, India.
Full text not available from this repository. (Request a copy)Abstract
Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | F200 Materials Science F300 Physics |
| Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
| Related URLs: | |
| Depositing User: | EPrint Services |
| Date Deposited: | 14 Oct 2011 15:09 |
| Last Modified: | 31 Jul 2021 08:39 |
| URI: | http://nrl.northumbria.ac.uk/id/eprint/516 |
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