Detection of single photons using a field effect transistor with a layer of quantum dots

Kardynał, Beata, Shields, Andrew, O'Sullivan, Martin, Beattie, Neil, Farrer, Ian, Ritchie, David and Cooper, Ken (2002) Detection of single photons using a field effect transistor with a layer of quantum dots. Measurement Science and Technology, 13 (11). pp. 1721-1726. ISSN 0957-0233

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Official URL: http://dx.doi.org/10.1088/0957-0233/13/11/308

Abstract

We demonstrate single-photon detection with a GaAs/AlGaAs modulation-doped field effect transistor. High sensitivity of the transistor to light is obtained by incorporating in its structure a layer of self-organized InAs quantum dots in close proximity to the conducting channel but separated by a thin AlGaAs barrier. We show that capture of a single photoexcited carrier by a quantum dot results in a sizeable change in the source–drain current of the transistor, allowing the detection of a single photon.

Item Type: Article
Subjects: F300 Physics
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Ay Okpokam
Date Deposited: 18 Jun 2012 16:23
Last Modified: 09 Mar 2016 12:36
URI: http://nrl.northumbria.ac.uk/id/eprint/7722

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