Properties of Al-doped ZnS films grown by chemical bath deposition

Nagamani, K., Prathap, Pathi, Lingappa, Yekula, Miles, Robert and Ramakrishna Reddy, Kotte (2012) Properties of Al-doped ZnS films grown by chemical bath deposition. Physics Procedia, 25. pp. 137-142. ISSN 1875-3892

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Official URL: http://dx.doi.org/10.1016/j.phpro.2012.03.062

Abstract

Zinc sulphide (ZnS) buffer layers are a cadmium free, wider energy band gap, alternative to the cadmium sulphide(CdS) buffer layers commonly used in copper indium gallium diselenide (CuInGaSe2)-based solar cells. However extrinsic doping of the ZnS is important to lower the resistivity of the layers and to improve flexibility of device design. In this work, Al-doped ZnS nanocrystalline films have been produced on glass substrates using a chemical bath deposition (CBD) method. The Al- concentration was varied from 0 at. % to 10 at. %, keeping other deposition parameters constant. The elemental composition of a typical sample with 6 at. % ‘Al’ in ZnS was Zn=44.9 at. %, S=49.8 at. % and Al=5.3 at.%. The X-ray diffraction data taken on these samples showed a broad peak corresponding to the (111) plane of ZnS while the crystallite size varied in the range, 8 – 15 nm, depending on the concentration of Al in the layers. The films with a Al-doping content of 6 at. % had an optical transmittance of 75 % in the visible range and the energy band gap evaluated from the data was 3.66 eV. The films n-type electrical conductivities and the electrical resistivity varied in the range, 107-103 Ωcm, it decreasing with an increase of the Al-concentration in the solution.

Item Type: Article
Subjects: H800 Chemical, Process and Energy Engineering
Department: Faculties > Engineering and Environment > Physics and Electrical Engineering
Depositing User: Sarah Howells
Date Deposited: 18 Jul 2012 14:37
Last Modified: 11 May 2017 18:09
URI: http://nrl.northumbria.ac.uk/id/eprint/8180

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