A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite

Clayton, Andrew, Irvine, Stuart, Barrioz, Vincent, Zoppi, Guillaume, Forbes, Ian and Brooks, William (2010) A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite. In: The 6th Photovoltaic Science Applications and Technology Conference(PVSAT-6), 24-26 March 2010, University of Southampton, Southampton, UK.

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Abstract

FeSx layers were deposited onto aluminosilicate glass substrates over a temperature range of 180°C to 500°C using a horizontal AP-MOCVD reactor. Fe(CO)5 was used as the Fe source in combination with t-Bu2S2 or t-BuSH as S precursor to control the rate of reaction and film stoichiometry. The Fe and S partial pressures were kept at 7.5 x 103 and 3.0 mbar, giving a gas phase S/Fe ratio of 400. Reactions followed a non-Arrhenius relationship at higher temperatures. XRD revealed mixed FeSx phases in the layers, which consisted mainly of FeS and Fe1-xS. Post growth annealing of the FeSx films using S powder in a static argon atmosphere and temperatures ranging from 250°C to 400°C was carried out using a 30 minute soak time. Characterisation by XRD confirmed a transitional phase change to FeS2 for the S anneal at 400°C. These films were highly absorbing in the visible region of the solar spectrum, which extended into the NIR. Devices with a p-i-n structure were produced using either a sulphurised or non-sulphurised FeSx i-layer, and compared to p-n devices without an i-layer. A non-sulphurised p-i-n device had the best I-V results, which was attributed to reduced lateral inhomogeneity across the device relative to the thinner p-n device structures. Devices with sulphurised FeSx i-layers performed least efficiently which is suspected to be due to a less defined FeSx/CdS junction caused by severe conditions during the S annealing process.

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