Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films

Yakushev, Michael, Maiello, Pietro, Raadik, Taavi, Shaw, Martin, Edwards, Paul, Krustok, Jüri, Mudryi, Alexandre, Forbes, Ian and Martin, Robert (2014) Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films. Energy Procedia, 60. pp. 166-172. ISSN 1876 6102

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Abstract

The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.

Item Type:	Article
Uncontrolled Keywords:	Cu3BiS3, thin films, solar cells, raman spectroscopy, photoluminescence, photoreflectance
Subjects:	F200 Materials Science H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	20 Feb 2015 08:53
Last Modified:	12 Oct 2019 19:08
URI:	http://nrl.northumbria.ac.uk/id/eprint/21450

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