Scalable silicon nanowire photodetectors

Servati, Peyman, Colli, Alan, Hofmann, S., Fu, Yong Qing, Beecher, Paul, Durrani, Z. A. K., Ferrari, Andrea, Flewitt, Andrew, Robertson, J. and Milne, William (2007) Scalable silicon nanowire photodetectors. Physica E: Low-dimensional Systems and Nanostructures, 38 (1-2). pp. 64-66. ISSN 1386 9477

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This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.

Item Type: Article
Uncontrolled Keywords: Nanowires; Nanocomposites; Photodetectors; Schottky diodes
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 27 Mar 2015 09:30
Last Modified: 12 Oct 2019 19:06

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