Nanowire Lithography on Silicon

Colli, Alan, Fasoli, Andrea, Pisana, Simone, Fu, Yong Qing, Beecher, Paul, Milne, William and Ferrari, Andrea (2008) Nanowire Lithography on Silicon. Nano Letters, 8 (5). pp. 1358-1362. ISSN 1530-6984

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Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices. Planar field-effect transistors made of a single SOI-NW channel exhibit a contact resistance below 20 kΩ and scale with the channel width. Further, we assess the electrical response of NW networks obtained using a mask of SiO2 NWs ink-jetted from solution. The resulting conformal network etched into the underlying wafer is monolithic, with single-crystalline bulk junctions; thus no difference in conductivity is seen between a direct NW bridge and a percolating network. We also extend the potential of NWL into the third dimension, by using a periodic undercutting that produces an array of vertically stacked NWs from a single NW mask.

Item Type: Article
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 27 Mar 2015 10:50
Last Modified: 12 Oct 2019 19:06

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