MOCVD of SnSx thin films for solar cell application

Clayton, Andrew, Irvine, Stuart, Barrioz, Vincent and Masciullo, Alessia (2015) MOCVD of SnSx thin films for solar cell application. MRS Proceedings, 1738. ISSN 1946-4274

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An inline metal organic chemical vapor deposition system was used to deposit tin sulfide at temperatures >500 °C. Tetramethyltin was used as the tin source and diethyldisulfide as the sulfur source. An overhead injector configuration was used delivering both precursors directly over the substrate. The tin and sulfur precursors were premixed before injection to improve chemical reaction in the gas phase. Growth temperatures 500 – 540 °C were employed producing films with approximate 1:1 stoichiometry of Sn and S detected by energy dispersive x-ray spectroscopy. X-ray diffraction showed there to be mixed phases with Sn2S3 present with SnS.

Item Type: Article
Uncontrolled Keywords: thin film; metalorganic deposition; photovoltaic
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 23 Nov 2015 13:00
Last Modified: 12 Oct 2019 19:20

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