SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells

Rowlands-Jones, Rachael, Irvine, Stuart, Barrioz, Vincent, Jones, E. W. and Lamb, Daniel (2007) SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells. Semiconductor Science and Technology, 23 (1). 015017. ISSN 0268-1242

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Abstract

A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.

Item Type:	Article
Subjects:	F200 Materials Science
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	24 Nov 2015 09:51
Last Modified:	10 Oct 2019 22:45
URI:	http://nrl.northumbria.ac.uk/id/eprint/24711

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