Enhancing grain growth and boosting Voc in CZTSe absorber layers — Is Ge doping the answer?

Neuschitzer, Markus, Giraldo, Sergio, Marquez Prieto, Jose, Dimitrievska, Mirjana, Placidi, Marcel, Forbes, Ian, Izquierdo-Roca, Victor, Perez-Rodriguez, Alejandro and Saucedo, Edgardo (2016) Enhancing grain growth and boosting Voc in CZTSe absorber layers — Is Ge doping the answer? In: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, Piscataway, 0183-0187. ISBN 978-1-5090-2725-5

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Abstract

In this study we present beneficial effects on the device performance with a Ge-assisted crystallization of nanocrystalline CZTSe precursors. For low Ge content layers, an increase in doping density is observed, which results in 8.6% efficiency devices and Voc values of above 470 mV, corresponding to Voc deficits of 583 mV, comparable to current record devices. High Ge content layers exhibit enhanced grain growth, however, they are also associated with deterioration in cell performance. Admittance spectroscopy measurements identified the appearance of a deep defect for high Ge doping. These results indicate that an accurate control of group IV (Ge, Sn) elemental composition seems mandatory for high device performance.

Item Type:	Book Section
Uncontrolled Keywords:	thin film devices, germanium, grain size, semiconductor device doping
Subjects:	F200 Materials Science
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	04 Jan 2017 11:39
Last Modified:	12 Oct 2019 19:21
URI:	http://nrl.northumbria.ac.uk/id/eprint/28966

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