Crystallized InBiS3 thin films with enhanced optoelectronic properties

Ali, Nisar, Hussain, Arshad, Rashid, Ahmed, Bin Omar, Muhammad Firdaus, Sultan, Muhammad and Fu, Yong Qing (2018) Crystallized InBiS3 thin films with enhanced optoelectronic properties. Applied Surface Science, 436. pp. 293-301. ISSN 0169-4332

Ali et al - crystallized inBis3 thin films.pdf - Accepted Version

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In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the postannealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 10⁵cm-1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 Ω-cm, respectively) with increasing annealing temperatures (from 200 to 350°C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications.

Item Type: Article
Uncontrolled Keywords: Thin films; Photovoltaics; Optical properties; XRD; Electrical properties
Subjects: H600 Electronic and Electrical Engineering
J100 Minerals Technology
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Paul Burns
Date Deposited: 29 Nov 2017 09:44
Last Modified: 01 Aug 2021 09:19

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