Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts

Dai, Mingjin, Chen, Hongyu, Wang, Fakun, Long, Mingsheng, Shang, Huiming, Hu, Yunxia, Li, Wen, Ge, Chuanyang, Zhang, Jia, Zhai, Tianyou, Fu, Yong Qing and Hu, PingAn (2020) Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts. ACS Nano, 14 (7). pp. 9098-9106. ISSN 1936-0851

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Official URL: https://doi.org/10.1021/acsnano.0c04329


Self-powered photodetectors with great potential for implanted medical diagnosis and smart communications have been severely hindered by the difficulty of simultaneously achieving high sensitivity and fast response speed. Here, we report an ultrafast and highly sensitive self-powered photodetector based on two-dimensional (2D) InSe, which is achieved by applying a device architecture design and generating ideal Schottky or ohmic contacts on 2D layered semiconductors, which are difficult to realize in the conventional semiconductors owing to their surface Fermi-level pinning. The as-fabricated InSe photodiode features a maximal lateral self-limited depletion region and a vertical fully depleted channel. It exhibits a high detectivity of 1.26 × 1013 Jones and an ultrafast response speed of ∼200 ns, which breaks the response speed limit of reported self-powered photodetectors based on 2D semiconductors. The high sensitivity is achieved by an ultralow dark current noise generated from the robust van der Waals (vdW) Schottky junction and a high photoresponsivity due to the formation of a maximal lateral self-limited depletion region. The ultrafast response time is dominated by the fast carrier drift driven by a strong built-in electric field in the vertical fully depleted channel. This device architecture can help us to design high-performance photodetectors utilizing vdW layered semiconductors.

Item Type: Article
Additional Information: Funding information: This work is supported by the National Basic Research Program of China (2019YFB1310200), Foundation for Innovative Research Groups of the National Natural Science Foundation of China (no. 51521003), National Postdoctoral Science Foundation of China (nos. 2017M621254, 2018T110280), Heilongjiang Provincial Postdoctoral Science Foundation (no. LBH-TZ1708), Self-Planned Task of State Key Laboratory of Robotics and System (HIT) (no. SKLRS201607B), Engineering Physics and Science Research Council of UK (EPSRC EP/P018998/1), and Newton Mobility Grant (IE161019) through Royal Society and Natural Science Foundation of China.
Uncontrolled Keywords: two-dimensional semiconductor, van der Waals contacts, fully depleted channel, self-limited depletion region, nanoseconds
Subjects: F200 Materials Science
F300 Physics
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: John Coen
Date Deposited: 07 Jul 2020 10:14
Last Modified: 02 Nov 2021 10:45
URI: http://nrl.northumbria.ac.uk/id/eprint/43676

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