Mn3Ag(1-x)Cu(x)N antiperovskite thin films with ultra-low temperature coefficient of resistance

Lukose, Cecil Cherian, Zoppi, Guillaume and Birkett, Martin (2022) Mn3Ag(1-x)Cu(x)N antiperovskite thin films with ultra-low temperature coefficient of resistance. Journal of Materials Science and Technology, 99. pp. 138-147. ISSN 1005-0302

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We demonstrate the first successful attempt to partially substitute Cu into the Mn3AgN-antiperovskite system to form Mn3Ag(1-x)Cu(x)N thin films with ultra-low temperature coefficient of resistance (TCR) for fabrication of ultra-precise passive components. Films were grown by reactive magnetron sputtering on alumina and glass substrates and were found to be amorphous in nature with highly negative TCR of -233 to -351ppm/˚C in their as-grown state. Increasing Cu alloying from x=0 to 1, resulted in increased sheet resistance, a negative shift of TCR and a change of grain morphology from spherical to elongated. Post-deposition heat treatment at 300-375˚C, resulted in a positive shift of TCR and an ultra-low TCR of -4.66ppm/˚C for films with x=0.6. The heat treatment induces grain growth, surface roughness and the formation of a manganese oxide upper surface layer up until temperatures of 350˚C, after which surface oxidation begins to dominate. The growth rate of the surface layer is controlled by the Cu concentration and heat treatment temperature, which both play a central role in the development of these novel ultra-low TCR Mn3Ag(1-x)Cu(x)N thin film structures.

Item Type: Article
Additional Information: Funding information: This work was supported by a collaborative partnership between Northumbria University and TT Electronics PLC, Bedlington, UK. TT Electronics PLC, Bedlington, UK supplied the prescribed alumina substrates with silver conductor pads used in this experiment. IRC TT, Corpus Christi, USA, a subsidiary of TT Electronics PLC, shared insight into key production stages of extremely low TCR passive components.
Uncontrolled Keywords: Antiperovskite, thin film, sputter deposition, annealing, surface oxidation, near-zero TCR
Subjects: F200 Materials Science
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Faculties > Engineering and Environment > Mechanical and Construction Engineering
Depositing User: John Coen
Date Deposited: 02 Jul 2021 11:26
Last Modified: 21 Jul 2022 03:30

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