Nwofe, Patrick, Ramakrishna Reddy, Kotte, Ramya, Kottadi, Tan, Kian, Zoppi, Guillaume, Forbes, Ian and Miles, Robert (2011) Determination of the minority carrier diffusion length of SnS using electro-optical measurements. In: European Materials Research Society Conference, 9-13 May 2011, Nice, France.
Full text not available from this repository. (Request a copy)Abstract
The minority carrier diffusion length has been identified as one of the most important parameters that governs the performance of a solar cell device. In this work thin films of SnS have been grown by the thermal evaporation of high purity tin sulphide onto cadmium sulphide/indium tin oxide/ glass substrates to fabricate heterojunction solar cell devices. The chemical and physical properties of the SnS were optimised by varying the source and substrate temperatures, the deposition time and by post-deposition annealing of the samples. The material properties of the SnS were investigated using scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDAX), x-ray diffractometry (XRD), spectro-photometry and using electrical measurements. The minority carrier diffusion length was determined using spectral response and capacitance-voltage based measurements.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | F200 Materials Science |
| Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
| Related URLs: | |
| Depositing User: | EPrint Services |
| Date Deposited: | 19 Oct 2011 08:56 |
| Last Modified: | 12 Oct 2019 19:07 |
| URI: | http://nrl.northumbria.ac.uk/id/eprint/1018 |
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