Highly orientated and conducting ZnO:Ga layers grown by chemical spray pyrolysis

Ramakrishna Reddy, Kotte, Miles, Robert, Forbes, Ian and Reddy, T. B. S. (2002) Highly orientated and conducting ZnO:Ga layers grown by chemical spray pyrolysis. Surface and Coatings Technology. pp. 110-113. ISSN 0257-8972

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Abstract

Highly conducting and transparent gallium doped zinc oxide (ZnO:Ga) layers have been deposited using a spray pyrolysis process. The films were deposited on Corning 7059 glass substrates at different temperatures and gallium doping concentrations, keeping the other deposition parameters constant. The ZnO:Ga films grown at a substrate temperature of 350 °C with a gallium doping concentration of 5.0 at.% had the best physical properties. These layers were highly oriented along the 〈002〉 with a grain size of 98 nm. The films were n-conductivity type with an electrical conductivity of 1.32×103 Ω−1cm−1. The transmittance of these films was higher than 85% in the visible region with a high reflectance in the infra-red region. The figure of merit evaluated was 3.4×10−2 Ω−1.

Item Type:	Article
Additional Information:	Volume 151-152 For this work Dr. Reddy (from Sri Venkaswara University, India) was funded by an EPSRC funded visiting fellowship ( GR/R10653/01). Development of important transparent conductive oxide TCO material which has wide range of applications e.g. use in thin film solar cells and large area display devices. The work was based on use advanced material characterisation methods. International collaboration. Final EPSRC report: the work was assessed as “tending to outstanding”.
Subjects:	J500 Materials Technology not otherwise specified
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	EPrint Services
Date Deposited:	21 Nov 2008 16:40
Last Modified:	12 Oct 2019 19:05
URI:	http://nrl.northumbria.ac.uk/id/eprint/1130

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