Optimization of the deposition and annealing of CuAIMo thin film resistors

Birkett, Martin (2012) Optimization of the deposition and annealing of CuAIMo thin film resistors. In: Advances in Manufacturing Technology XXVI. Aston Business School, pp. 504-509. ISBN 978-1905866601

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Abstract

This paper studies the effect of varying deposition and annealing process parameters on the electrical performance and structural properties of a novel CuAlMo thin film resistor material. The design of experiments (DOE) and analysis of variance (ANOVA) methods were utilized to determine the optimum process conditions for the films which were prepared using DC magnetron sputtering before being annealed in air ambient. Films of low sheet resistance with near zero temperature coefficient of resistance (TCR) and good long term stability were obtained at a high deposition rate and low sputtering pressure. Subsequent annealing of the films in air resulted in further crystallization with grain growth and stress relief which gave an increase in conductivity and TCR. In addition to the deposition parameters, the stability of the film was also shown to improve with increasing heat treatment time and temperature.

Item Type:	Book Section
Subjects:	H300 Mechanical Engineering H700 Production and Manufacturing Engineering
Department:	Faculties > Engineering and Environment > Mechanical and Construction Engineering
Related URLs:	Organisation
Depositing User:	Dr Martin Birkett
Date Deposited:	12 Jul 2013 08:59
Last Modified:	13 Oct 2019 00:32
URI:	http://nrl.northumbria.ac.uk/id/eprint/13205

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• Optimization of the deposition and annealing of CuAIMo thin film resistors. (deposited 12 Jul 2013 08:59) [Currently Displayed]

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