Investigation of quantum dot solar cell device performance

Beattie, Neil, Zoppi, Guillaume, Farrer, Ian, See, Patrick, Miles, Robert and Ritchie, David (2013) Investigation of quantum dot solar cell device performance. In: Materials Research Society Spring Meeting 2013, 1-5 April 2013, San Francisco.

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The device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.

Item Type: Conference or Workshop Item (Paper)
Subjects: F200 Materials Science
F300 Physics
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
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Depositing User: Neil Beattie
Date Deposited: 25 Sep 2013 15:42
Last Modified: 12 Oct 2019 19:08

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