Electrical characteristics of metal contacts on porous silicon

Mabrook, M., Ray, Asim, Ghassemlooy, Zabih and Brown, S. (1995) Electrical characteristics of metal contacts on porous silicon. In: IEE Colloquium on Materials for Displays, 3 October 1995, London, UK.

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Official URL: http://dx.doi.org/10.1049/ic:19950981


I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.

Item Type: Conference or Workshop Item (Paper)
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 02 May 2014 13:23
Last Modified: 12 Oct 2019 18:32
URI: http://nrl.northumbria.ac.uk/id/eprint/16355

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