Progress in the development of a InAs/GaAs quantum dot solar cell

Beattie, Neil, Zoppi, Guillaume, Farrer, Ian, See, Patrick, Morrison, Dominique, Miles, Robert and Ritchie, David (2014) Progress in the development of a InAs/GaAs quantum dot solar cell. In: 10th Photovoltaic Science Applications and Technology (PVSAT-10), 23 - 25 April 2014, Loughborough, UK.

PDF 58-2014-04-PVSAT-10_004_v2_NEIL_QDSC.pdf - Submitted Version Restricted to Repository staff only Download (499kB) | Request a copy

Abstract

InAs/GaAs quantum dot solar cells have been fabricated and tested under 1-sun and up to 500-suns optical concentration. At 1-sun, the quantum dots are found to increase the short circuit current by ~4% relative to a control device without quantum dots. Furthermore, the evolution of the short circuit current with open circuit voltage up to 500-suns is found to be nearly ideal yielding a diode ideality factor of ~1.16. The implied active area solar energy conversion efficiency for the quantum dot solar cell at 500-suns is 19.5% indicating significant potential for this technology.

Actions (login required)

View Item

Downloads