Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment

Nwofe, Patrick, Ramakrishna Reddy, Kotte and Miles, Robert (2013) Type conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment. In: 39th IEEE Photovoltaic Specialists Conference (PVSC), June 16th - 21st, 2013, Tampa, Florida.

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Official URL: http://dx.doi.org/10.1109/PVSC.2013.6744988


Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2 nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl4/CH3OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400°C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl4/CH3OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: annealing; film thickness; type-conversion; homojunction
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Paul Burns
Date Deposited: 18 Sep 2014 13:08
Last Modified: 12 Oct 2019 19:07
URI: http://nrl.northumbria.ac.uk/id/eprint/17612

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