Pearsall, Nicola, Robson, Nicola, Thomas, H., Luo, Jikui, Hardingham, C. M. and Cross, T. A. (1993) Annealing of irradiation damage in epitaxial InP homojunction solar cells. In: Twenty Third IEEE Photovoltaic Specialists Conference, 10-14 May1993, Lousiville, KY.
Full text not available from this repository. (Request a copy)Abstract
Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Subjects: | H600 Electronic and Electrical Engineering |
| Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
| Depositing User: | Becky Skoyles |
| Date Deposited: | 17 Feb 2015 16:43 |
| Last Modified: | 12 Oct 2019 18:32 |
| URI: | http://nrl.northumbria.ac.uk/id/eprint/18669 |
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