Annealing of irradiation damage in epitaxial InP homojunction solar cells

Pearsall, Nicola, Robson, Nicola, Thomas, H., Luo, Jikui, Hardingham, C. M. and Cross, T. A. (1993) Annealing of irradiation damage in epitaxial InP homojunction solar cells. In: Twenty Third IEEE Photovoltaic Specialists Conference, 10-14 May1993, Lousiville, KY.

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Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.

Item Type: Conference or Workshop Item (Paper)
Subjects: H600 Electronic and Electrical Engineering
Department: Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User: Becky Skoyles
Date Deposited: 17 Feb 2015 16:43
Last Modified: 12 Oct 2019 18:32

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