Formation of a stable ohmic contact to CdTe thin films through the diffusion of P from Ni-P

Ghosh, B., Purakayastha, S., Datta, Psantu, Miles, Robert, Carter, M. J. and Hill, Robert (1995) Formation of a stable ohmic contact to CdTe thin films through the diffusion of P from Ni-P. Semiconductor Science and Technology, 10 (1). pp. 71-76. ISSN 0268 1242

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Abstract

Thin films of CdTe used in electronic devices often have problems with electrical contacts. This is due to the non-availability of a contacting material with a large work function for proper matching with p-CdTe. Moreover, the method of doping the thin film is the real problem. There are several possible solutions in this connection, one of which is the formation of a p + layer on the CdTe surface by the reaction or indiffusion of dopant materials. Another approach is to engineer the barrier height prior to the metal contact deposition by depositing a layer of Cu-doped ZnTe onto the CdTe. However, all of the above methods have their own limitations. In this paper a method is presented which can overcome these limitations. Using an autocatalytic reduction process, NbP composite material has been deposited successfully on the p-CdTe surface. On annealing at an optimum temperature of 250 degrees C, the contact resistivity comes down to 0.1-0.08 Omega cm 2. XRD and EDAX studies reveal that the lowering of the contact resistance is due to the diffusion of P into the CdTe with the formation of a p + layer. A model for this has also been presented in the text.

Item Type:	Article
Subjects:	F300 Physics
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	17 Feb 2015 15:26
Last Modified:	12 Oct 2019 18:32
URI:	http://nrl.northumbria.ac.uk/id/eprint/18740

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