Formation of low resistance contacts to p-CdTe by annealing autocatalytically deposited Ni-P alloy coatings

Miles, Robert, Ghosh, B., Duke, S., Bates, Jonathan R., Carter, M. J., Datta, Psantu and Hill, Robert (1996) Formation of low resistance contacts to p-CdTe by annealing autocatalytically deposited Ni-P alloy coatings. Journal of Crystal Growth, 161 (1-4). pp. 148-152. ISSN 0022-0248

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Abstract

A novel technology for forming low resistance ohmic contacts to p-CdTe has been developed. The technology is based on the autocatalytic deposition of Ni-P alloy coatings onto p-CdTe followed by an anneal to reduce the degree of supersaturation of P in Ni and to hence diffuse P into the CdTe. Energy dispersive X-ray analysis (EDAX) and X-ray diffraction data were used to monitor changes in the Ni-P during the annealing and contact resistance measurements made to assess the viability of the technology. The data are consistent with the in-diffusion of P into the CdTe and the specific contact resistivity reduced to 0.08-0.1 Ω · cm 2 for an optimum annealing temperature of 250°C. The contact technology has also been applied to the p-CdTe used in CdS/CdTe thin film solar cells with encouraging results.

Item Type:	Article
Subjects:	H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	17 Feb 2015 10:38
Last Modified:	12 Oct 2019 18:32
URI:	http://nrl.northumbria.ac.uk/id/eprint/18836

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