Characterisation of in-situ thermally evaporated CdS/CdTe thin film solar cells with Ni-P back contacts

Duke, S., Miles, Robert, Pande, P., Spoor, S., Ghosh, B., Datta, Psantu, Carter, M. J. and Hill, Robert (1996) Characterisation of in-situ thermally evaporated CdS/CdTe thin film solar cells with Ni-P back contacts. Journal of Crystal Growth, 159 (1-4). pp. 916-919. ISSN 0022-0248

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Abstract

CdS/CdTe thin film solar cells have been produced using the in-situ thermal evaporation of CdS followed by CdTe onto SnO 2 coated glass substrates and a novel contact material, Ni-P, used to make contact to the p-CdTe. The specific contact resistivity of this contact to p-CdTe was found to be reduced to 0.08-0.01 Ω · cm 2 for an optimum annealing temperature of 250°C, the behaviour corresponding to a reduction in the percent of P in the Ni-P contact and an increase in photocurrent for illuminated CdS/CdTe/Ni-P solar cells. Photocapacitance data for such solar cells depended strongly on whether or not the devices had been given a CdCl 2 heat treatment prior to contact formation, the heat treatment eliminating deep states within the CdTe. Shallow levels with depths of 0.10, 0.21 and 0.38 eV were observed for the untreated samples and shallow levels with depths of 0.04, 0.08, 0.15 and 0.21 eV for the CdCl 2 treated samples.

Item Type:	Article
Subjects:	H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	16 Feb 2015 15:16
Last Modified:	12 Oct 2019 18:32
URI:	http://nrl.northumbria.ac.uk/id/eprint/18907

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