Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectric device fabrication

Li, Yifan, Parkes, William, Haworth, Les, Stokes, Adam, Muir, K., Li, P., Collin, A., Hutcheon, N., Henderson, Robert and Rae, Bruce (2008) Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectric device fabrication. Solid-State Electronics, 52 (9). pp. 1382-1387. ISSN 0038-1101

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Abstract

This paper reports a CMOS compatible fabrication procedure that enables electrowetting-on-dielectric (EWOD) technology to be post-processed on foundry CMOS technology. With driving voltages less than 15 V it is believed to be the lowest reported driving voltage for any material system compatible with post-processing on completed integrated circuits wafers. The process architecture uses anodically grown tantalum pentoxide as a pinhole free high dielectric constant insulator with an overlying 16 nm layer of Teflon-AF®, which provides the hydrophobic surface for droplets manipulation. This stack provides a very robust dielectric, which maintains a sufficiently high capacitance per unit area for effective operation at a reduced voltage (15 V) which is more compatible with standard CMOS technology. The paper demonstrates that the sputtered tantalum layer used for the electrodes and the formation of the insulating dielectric can readily be integrated with both aluminium and copper interconnect used in foundry CMOS.

Item Type:	Article
Uncontrolled Keywords:	MEMS, microfluidics, EWOD, electrowetting, CMOS, tantalum pentoxide, high-K dielectric, post-process
Subjects:	F200 Materials Science F300 Physics H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mechanical and Construction Engineering
Depositing User:	Yifan Li
Date Deposited:	26 Feb 2015 14:43
Last Modified:	12 Oct 2019 22:53
URI:	http://nrl.northumbria.ac.uk/id/eprint/21220

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