A three-dimensional silicon shadowmask for patterning on trenches with vertical walls

Morishita, S., Kim, Joungho, Marty, F., Li, Yifan, Walton, Anthony and Mita, Yoshio (2009) A three-dimensional silicon shadowmask for patterning on trenches with vertical walls. In: Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International. IEEE, Piscataway, NJ, pp. 1608-1611. ISBN 978-1-4244-4190-7

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Abstract

This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles during evaporation. The resulting tracks exhibited good isolation between adjacent metal patterns and with the resistance of the track between top and bottom of trench measured at 3.4Omega.

Item Type:	Book Section
Additional Information:	This paper was presented at TRANSDUCERS 2009, 21-25 June 2009, Denver.
Uncontrolled Keywords:	3D patterning, shadow mask, DRIE
Subjects:	F300 Physics H600 Electronic and Electrical Engineering
Department:	Faculties > Engineering and Environment > Mechanical and Construction Engineering
Depositing User:	Yifan Li
Date Deposited:	26 Feb 2015 15:24
Last Modified:	12 Oct 2019 22:29
URI:	http://nrl.northumbria.ac.uk/id/eprint/21223

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