Yakushev, Michael, Maiello, Pietro, Raadik, Taavi, Shaw, Martin, Edwards, Paul, Krustok, Jüri, Mudryi, Alexandre, Forbes, Ian and Martin, Robert (2014) Investigation of the Structural, Optical and Electrical Properties of Cu3BiS3 Semiconducting Thin Films. Energy Procedia, 60. pp. 166-172. ISSN 1876 6102
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Abstract
The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24 eV and EgY =1.53 eV at 4 K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5 K reveal two broad emission bands at 0.84 and 0.99 eV quenching with an activation energy of 40 meV.
| Item Type: | Article |
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| Additional Information: | Funding information: This work was supported by the EPSRC (SUPERGE N II “PV21”, EP/F029624/2 and EP/H5 0009X/1), BCFR (F13IC-018), the US Civilian Research & Development Foundation (CRDF Global) and the Ural Branch of RAS (RUE2-7105-EK-13), RFBR (14-02-00080, 13-03-96032, 12-U3-1006), Estonian Science Foundation Grant G9369. |
| Uncontrolled Keywords: | Cu3BiS3, thin films, solar cells, raman spectroscopy, photoluminescence, photoreflectance |
| Subjects: | F200 Materials Science H600 Electronic and Electrical Engineering |
| Department: | Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering |
| Depositing User: | Becky Skoyles |
| Date Deposited: | 20 Feb 2015 08:53 |
| Last Modified: | 19 May 2022 12:15 |
| URI: | http://nrl.northumbria.ac.uk/id/eprint/21450 |
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