Review of Nanostructured Resistive Switching Memristor and Its Applications

Hu, S. G., Wu, Shuangyi, Jia, W. W., Yu, Q., Deng, L. J., Fu, Yong Qing, Liu, Y. and Chen, Tu Pei (2014) Review of Nanostructured Resistive Switching Memristor and Its Applications. Nanoscience and Nanotechnology Letters, 6 (9). pp. 729-757. ISSN 1941 4900

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Abstract

Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications.

Item Type:	Article
Subjects:	F200 Materials Science
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	23 Mar 2015 15:29
Last Modified:	12 Oct 2019 19:08
URI:	http://nrl.northumbria.ac.uk/id/eprint/21745

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