Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

Nicolau, Dan, Liu, Yang, Chen, Tu Pei, Tse, Man Siu, Fu, Yong Qing, Muller, Uwe and Dell, John M. (2004) Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films. Proceedings of SPIE, 5275. pp. 374-377. ISSN 0277-786X

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Abstract

In this study, X-ray photoelectron spectroscopy (XPS) is used to study the annealing effects on the structure and chemical states of Si-rich SiOx (x<2) films. The analysis of the XPS Si 2p peaks shows the existence of the five chemical structures corresponding to the Si oxidation states Sin+ (n =0, 1, 2, 3, and 4) in the SiOx films. The XPS results clearly show the evolution of various chemical structures and the formation of Si nanocrystals (corresponding to the oxidation state Si0) in the SiOx films as a function of annealing temperature and annealing time. The results are explained in terms of the thermal decompositions of the suboxides Si2O, SiO and Si2O3 (corresponding to the oxidation states Si1+, Si2+ and Si3+, respectively). The thermal decompositions lead to the growth of SiO2 (corresponding to the oxidation state Si4+) as well as the formation of Si nanocrystals in the SiOx films. On the other hand, the depth profiling experiment was carried out with ion sputtering. The relative concentration of each oxidation state at various depths is determined quantitatively from the XPS analysis. In addition, annealing effects on both the oxidation states and their depth distributions are studied as well.

Item Type:	Article
Subjects:	F200 Materials Science
Department:	Faculties > Engineering and Environment > Mathematics, Physics and Electrical Engineering
Depositing User:	Becky Skoyles
Date Deposited:	26 Mar 2015 11:58
Last Modified:	12 Oct 2019 19:05
URI:	http://nrl.northumbria.ac.uk/id/eprint/21803

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